性别

男

学历学位

博士

职称

教授

导师类型

博导、硕导

联系电话

所属学院

集成电路科学与工程学院

E-mail

jinshi58@163.com

人才称号

天津市高等学校学科领军人才、天津市创新人才计划重点领域团队负责人

学术兼职

首尔大学兼职教授

招生专业

材料科学与工程（博士招生）

电子科学与技术（硕士招生）、集成电路工程（硕士招生）

研究方向

半导体存储芯片、神经形态及类脑器件及其相关柔性器件

代表性学术成果：

科研项目：

1. “面向XX研制”, 天津市科技计划项目重大专项与工程（18ZXMJMTG00230）。

2. “基于两种不同导电机理的多值阻变存储器研究”，天津市自然科学基金重点项目（14JCZDJC31500）。

3. “高集成度FRAM所需的低温MOCVD-PZT工艺研究”，韩国三星电子。

4. “低功耗PRAM集成工艺研究”， Hynix。

5. “纳米静电容传感器研究”，韩国科技部。

科研论文:

1. Ren, Jiu Zhou; Liang, Hui; Li, Jia Cheng; Li,Ying Chen; Mi, Wei; Zhou, Li Wei; Sun, Zhe, Song, Xue; Cai, Gang Ri*; and Zhao, Jin Shi*, “Polyelectrolyte Bilayer-Based Transparent and Flexible Memristor for Emulating Synapses”, ACS Applied Materials & Interfaces, 2022, 14(12): 14541–14549. 

2. Yan,Yu; Li,Jia Cheng; Chen,Yu Ting; Wang,Xiang Yu; Cai, Gang Ri; Park, Hyeon Woo; Kim, Ji Hun; Zhao, Jin Shi*and Hwang, Cheol Seong* “Area-Type Electronic Bipolar Switching Al/TiO_1.7/TiO₂/Al Memory with Linear Potentiation and Depression Characteristics”, ACS Applied Materials & Interfaces, 2021, 13 (33): 39561-39572.

3. Zhao, Jin Shi; Guo, Shu Qin; Li, Jia Cheng; Li, Ying Chen; and Zhou, Li Wei; “Effect of Voltage Divider Layer on Self-current Compliance Resistive Switching in Ta/TaOx/ITO Structure with an Ultra-low Power Consumption”, Applied Physics Letters, 2021, 118: 042103.

4. Zhao, Jin Shi; Li, Ying Chen; Li, Jia Cheng; and Zhou Li Wei, “Role and Optimization of Thermal Rapid Annealing in Ta/TaOx/Ru Based Resistive Switching Memory”, Vacuum, 2021, 191: 11039.

5. Zhao, Jin Shi; Li, Jia Cheng; Hao, Chen Yang; Li Qiu Yang Li, Mi, Wei; Qiang, Xiaoyong and Zhou, Li Wei “Low Pressure Thermal Annealed Fabrication of VO₂ on Glass with Excellent Optical Properties”, Materials Science in Semiconductor Processing, 2021, 126: 105658.

6. Chen, Yu Ting; Yan, Yu; Wu, Jian Wen; Wang, Chen; Lin, Jun Ye; Zhao, Jin Shi* and Hwang, Cheol Seong; “Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaO_x Film”, ACS Applied Materials & Interfaces, 2020, 12(9): 10681-10688

7. Zhao, Jin Shi; Wang, Chen; Yan, Yu; Chen, Yu Ting; Sun, Wen Tao; Li, Jun Ye; Wang, Xiang Yu; Mi, Wei; Song Dian You* and Zhou, Li Wei*, “The Effect of High Resistivity AlO_δ Layer on Low-Power Consumption of TaO_x Based Resistive Switching Memory”, Vacuum, 2020, 174, 109186,.

8. Zhao, Jin Shi; Zhang, Ming; Wan, Shang Fei; Ying, Zheng Chun* and Hwang, Cheol Seong*; “Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO₂/Al/Polyimide Structure”, ACS Applied Materials & Interfaces, 2018, 10(2): 1828-1835.

9. Wan, Shang Fei; Yan, Yu; Wang, Chen; Yang, Zheng Chun; Zhao, Jin Shi*; “Impact of Potential Barrier on Electronic Resistive Switching Performance Based on Al/TiO_x/Al Structure”, Vacuum, 2018, 156: 91-96.

10. Wang, Yi Chuan; Yan, Yu; Wang, Chen; Chen, Yu Ting; Li, Jun Ye; Zhao, Jin Shi* and Hwang, Cheol Seong;“Controlling the Thin Interfacial Buffer Layer for Improving the Reliability of the Ta/Ta₂O₅/Pt Resistive Switching Memory”, Applied Physics Letters, 2018, 113: 072902.     

11. Yang, Zheng Chun; Zhao, Wen Liang; Wang, Jian Yun; Chen, Ran; Li, Xuan; Xue, Tao; Zhang, Kai Liang and Zhao, Jin Shi*; “Fabrication of Nickel/Multi-Layer Graphene/Manganese Dioxide Hybrid Film as Enhanced Micro-Supercapacitor Devices”, Science of Advanced Materials, 2018, 10(2): 215-219.                                                             

12. Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong* and Zhao, Jin Shi*; “Thin TiO_x Layer As a Voltage Divider Layer Located at the Quasi-Ohmic Junction in the Pt/Ta₂O₅/Ta Resistance Switching Memory”, Nanoscale, 2017, 9(6): 2358.

13. Zhao, Wen Liang; Zhang, Ming; Pan, Peng; Song, Dian You; Huang, Sheng Ming; Wei, Jun; Li, Xuan; Qi, Wen; Zhang, Kailiang and Zhao, Jin Shi*; “Design and Fabrication of Flexible Supercapacitor Devices by Using Mesoporous Carbon/Polyaniline Ink”, Surface & Coating Technology, 2017, 320: 595-600.

14. Jiang, Hao; Li, Xiang Yuan; Chen, Ran; Shao, Xing Long; Yoon, Jung Ho; Hu, Xi Wen Hwang, Cheol Seong* and Zhao, Jin Shi;* “Bias-Polarity-Dependent Resistance Switching in W/SiO₂/Pt and W/SiO₂/Si/Pt Structures”, Scientific Reports, 2016, 6: 22216.

15. Shao, Xing Long; Zhou, Li Wei; Yoon, Kyung Jean; Jiang, Hao; Zhao, Jin Shi*; Zhang, Kai Liang; Yoo,Si Jung and Hwang, Cheol Seong; “Electronic Resistance switching in the Al/TiO_x/Al structure for forming-free and area-scalable memory”, Nanoscale, 2015, 7: 11063–11074.

16. Zhou, Li Wei; Shao, Xing Long; Li, Xiang Yuan; Jiang, Hao; Chen, Ran; Yoon, Kyung Jean; Kim, Hae Jin; Zhang, Kailiang; Zhao, Jin Shi* and Hwang, Cheol Seong*, “Interface Engineering for Improving Reliability of Resistance Switching in Cu/HfO₂/TiO₂/Pt Structure”, Applied Physics Letters, 2015, 107: 072901-3.

授权专利：

1. “Semiconductor Memory Device”，美国，US 8,581,346 B2，2013。

2. “Semiconductor Devices Having Resistive Memory Element”，美国，US 7,838,863 B2, 2010。

3. “Nonvolatile Memory Device”，美国，US 8,331,152 B2，2012。

4. “Semiconductor Memory Device”，美国，US8,264,018 B2，2012。

5. “Bipolar Switching Type Nonvolatile Memory Device Having Tunneling Layer”，韩国，10-0809724，2009。

6. “The Method Of Semiconductor Device”，韩国，1020100007200，2010。

7. “Methods for Fabricating Resistive Random Access Memory Devices”，韩国，101583717，2016。

8. “Multi-level Nonvolatile Memory Device Using Variable Resistive Element”，韩国，101519363，2015。

9. “一种多阻态阻变存储器”，中国，ZL201310078256.X，2015。

10. “一种自发生长金属纳米晶颗粒的P／N型叠层阻变存储器”，中国，ZL201210410617.1，2014。

11. “一种利用碳纳米管作为固态电解液的阻变存储器”，中国，ZL201010593266，2015。