代表性学术成果: 一、科研项目 1. 主持在研,IDBT芯片技术研究,中央领导地方科技发展专项(百城百园),2020.1~2021.9,55万 2. 主持在研,氧化铪基低功耗存储单元及其逻辑特性研究,国家重点实验室开放课题,2020.1~2021.12,8万 3. 第二完成人,二维硫化钼可控生长工艺优化及其场效应特性研究,天津市自然基金,2018.4~2021.3,20万 4. 主持完成,AlN基压电材料掺杂改性及微波段SAW器件的构建研究,天津自然科学基金, 2017.4~2020.3,10万 5. 主持完成,基于AlxB1-xNy复合薄膜微波段SAW滤波器的构建及压电互补机理研究,国家自然科学基金,2015.1~2017.12,31万 6. 第二完成人,碳纳米管电极交叉阵列阻变存储单元构建及开关特性研究国家自然科学基金,2013.01~2016.12,82万 二、科研论文 1. Controlled growth of bilayer-MoS2 films and MoS2-based field-effect transistor (FET) performance optimization, Advanced Electronic Materials,通讯作者,2018,I区SCI:GC9KD,IF=6.312 2. Field effect properties of single-layer MoS2(1-x)Se2x nanosheets produced by a one-step CVD process,Journal of Materials Science,通讯作者,2018,III区SCI:GO7WD,IF=3.442【封面文章】 3. Dual-functional Nonvolatile and Volatile Memory in Resistively Switching ITO/HfOx Devices,Phys. Status Solidi A,通讯作者, 2019, ,III区SCI:KW3GQ,IF=1.606 4. Piezoelectric performance improvement of ScAlN film and two-port SAW resonator application,Electronics Letter,通讯作者,2019,III区SCI:KR7YH,IF=1.343 5. Improved uniformity of TaOx-based resistive random access memory with ultralow operating voltage by electrodes engineering,ECS Journal of Solid State Science and Technology,通讯作者,2020,III区SCI:LC6MD,IF=1.795 6. Microstructure and bending piezoelectric characteristics of AlN film for high-frequency flexible SAW devices,Journal of Materials Science-Materials in Electronics,通讯作者,2021,II区SCI:RZ0TY,IF=2.02 7. Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiOx-Based Transparent Memristor,IEEE Transactions on Electron Devices,通讯作者,2021,II区SCI:RD2RC,IF=2.913 三、成果转化 专利转让,一种基于碳纳米管-纳米铜粉的环保型导电浆料,山西森达源科技有限公司,8万,2014.4-2015.3 发明专利——一种基于碳纳米管-纳米铜粉的环保型导电浆料,通过纳米碳管改性,解决了CNT与纳米铜粉的多相复合界面问题,基于新配方,提出了一种用于印刷电子行业的新型环保型纳米导电浆料,成功转让给“山西森达源科技有限公司”,实现技术应用。 |